Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 1.7 V |
Continuous Collector Current at 25 C: | 900 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd – Power Dissipation: | 2.8 kW |
Package/Case: | 62 mm |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 125 C |
Height: | 36.5 mm |
Length: | 106.4 mm |
Width: | 61.4 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | FZ600R12KE3HOSA1 SP000100724 |
Unit Weight: | 0,340 kg |
FZ600R12KE3 Infineon IGBT Modules
154,21€
IGBT Modules 1200V 600A SINGLE
Out of stock
Weight | 0,340 kg |
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OPTIONS: |
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