| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Continuous Collector Current at 25 C: | 450 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd – Power Dissipation: | 1600 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 150 C |
| Brand: | Infineon Technologies |
| Mounting Style: | Screw |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
| Part # Aliases: | FF300R12KT4HOSA1 SP000370607 |
| Unit Weight: | 0,335 kg |
FF300R12KT4 Infineon IGBT Module
91,35€ (excl. tax)
Out of stock
| Weight | 0,335 kg |
|---|---|
| OPTIONS: |
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