BSM10GD120DN2 Infineon IGBT Module

Name: BSM10GD120DN2 Infineon IGBT Module
SKU: BSM10GD120DN2
Price: 49.68 EUR
Availability: OutOfStock

49,68€

1200V 10A FL BRIDGE

Out of stock

SKU: BSM10GD120DN2 Category: Electronics Components Tag: Infineon

Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	Hex
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	2.7 V
Continuous Collector Current at 25 C:	15 A
Gate-Emitter Leakage Current:	120 nA
Pd – Power Dissipation:	80 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 150 C
Height:	17 mm
Length:	107.5 mm
Width:	45.5 mm
Brand:	Infineon Technologies
Mounting Style:	Screw
Maximum Gate Emitter Voltage:	+/- 20 V
Product Type:	IGBT Modules
Subcategory:	IGBTs
Part # Aliases:	BSM10GD120DN2BOSA1 SP000100367
Unit Weight:	0,180 kg

Weight	0,180 kg
OPTIONS:	NEW