BSM10GD120DN2 Infineon IGBT Module
49,68€ (excl. tax)
1200V 10A FL BRIDGE
Out of stock
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Hex |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.7 V |
| Continuous Collector Current at 25 C: | 15 A |
| Gate-Emitter Leakage Current: | 120 nA |
| Pd – Power Dissipation: | 80 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 150 C |
| Height: | 17 mm |
| Length: | 107.5 mm |
| Width: | 45.5 mm |
| Brand: | Infineon Technologies |
| Mounting Style: | Screw |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
| Part # Aliases: | BSM10GD120DN2BOSA1 SP000100367 |
| Unit Weight: | 0,180 kg |
| Weight | 0,180 kg |
|---|---|
| OPTIONS: |
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