BSM200GB120DN2 Infineon IGBT Module
79,48€ (excl. tax)
1200V 200A DUAL
Out of stock
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Half Bridge |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Continuous Collector Current at 25 C: | 290 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd – Power Dissipation: | 1.4 kW |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 150 C |
| Height: | 30 mm |
| Length: | 106.4 mm |
| Width: | 61.4 mm |
| Brand: | Infineon Technologies |
| Maximum Gate Emitter Voltage: | 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
| Part # Aliases: | BSM200GB120DN2HOSA1 SP000014913 |
| OPTIONS: |
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