MODULO IGBT FF800R17KF6C_B2
471,00€ (excl. tax)
Out of stock
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 1700 V |
| Collector-Emitter Saturation Voltage: | 2.6 V |
| Continuous Collector Current at 25 C: | 1300 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd – Power Dissipation: | 6.25 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 125 C |
| Height: | 38 mm |
| Length: | 140 mm |
| Width: | 130 mm |
| Brand: | Infineon Technologies |
| Maximum Gate Emitter Voltage: | 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
FF800R17KF6C-B2 Infineon IGBT Module_DataSheet.pdf
| OPTIONS: |
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