BSM50GAL120DN2 Infineon IGBT Module

Name: BSM50GAL120DN2 Infineon IGBT Module
SKU: BSM50GAL120DN2
Price: 29.40 EUR
Availability: OutOfStock

29,40€

1200V 50A

Out of stock

SKU: BSM50GAL120DN2 Category: Electronics Components Tag: Infineon

Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	Half Bridge
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	2.5 V
Continuous Collector Current at 25 C:	78 A
Gate-Emitter Leakage Current:	400 nA
Pd – Power Dissipation:	400 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 150 C
Height:	30.5 mm
Length:	94 mm
Width:	34 mm
Brand:	Infineon Technologies
Maximum Gate Emitter Voltage:	20 V
Subcategory:	IGBTs
Unit Weight:	0,250 Kg

OPTIONS:	NEW