| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Hex |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Continuous Collector Current at 25 C: | 50 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd – Power Dissipation: | 200 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 125 C |
| Height: | 17 mm |
| Length: | 107.5 mm |
| Width: | 45 mm |
| Brand: | Infineon Technologies |
| Mounting Style: | Screw |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
BSM25GD120DLCE3224 Infineon IGBT Module
70,65€ (excl. tax)
N-CH 1.2KV 50A
Out of stock
| OPTIONS: |
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