BSM200GA120DN2S Infineon IGBT Module

Name: BSM200GA120DN2S Infineon IGBT Module
SKU: BSM200GA120DN2S
Price: 93.96 EUR
Availability: OutOfStock

93,96€

1200V 200A

Out of stock

SKU: BSM200GA120DN2S Category: Electronics Components Tag: Infineon

Manufacturer:	Infineon
Product Category:	IGBT Transistors
Technology:	Si
Mounting Style:	Screw
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	2.5 V
Maximum Gate Emitter Voltage:	+/- 20 V
Continuous Collector Current at 25 C:	200 A
Pd – Power Dissipation:	1550 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 150 C
Height:	36.5 mm
Length:	106.4 mm
Width:	61.4 mm
Brand:	Infineon Technologies
Continuous Collector Current:	300 A
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Subcategory:	IGBTs

OPTIONS:	NEW