| Manufacturer: | Infineon |
| Product Category: | IGBT Transistors |
| Technology: | Si |
| Mounting Style: | Screw |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Continuous Collector Current at 25 C: | 200 A |
| Pd – Power Dissipation: | 1550 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 150 C |
| Height: | 36.5 mm |
| Length: | 106.4 mm |
| Width: | 61.4 mm |
| Brand: | Infineon Technologies |
| Continuous Collector Current: | 300 A |
| Gate-Emitter Leakage Current: | 200 nA |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
BSM200GA120DN2S Infineon IGBT Module
93,96€ (excl. tax)
Out of stock
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