FF400R12KE3 Infineon IGBT Modules
184,69€ (excl. tax)
IGBT Modules 1200V 400A DUAL HALF BRIDGE
TZ425N12KOF Infineon Thyristor_DataSheet FF400R12KE3 Infineon IGBT Modules_DataSheet.pdf
Out of stock
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.15 V |
| Continuous Collector Current at 25 C: | 580 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd – Power Dissipation: | 2 kW |
| Package/Case: | 62 mm |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 125 C |
| Height: | 30.9 mm |
| Length: | 106.4 mm |
| Width: | 61.4 mm |
| Brand: | Infineon Technologies |
| Mounting Style: | Screw |
| Maximum Gate Emitter Voltage: | 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
| Part # Aliases: | FF400R12KE3HOSA1 SP000100781 |
| Unit Weight: | 0,340 kg |
TZ425N12KOF Infineon Thyristor_DataSheet FF400R12KE3 Infineon IGBT Modules_DataSheet.pdf
| Weight | 0,340 kg |
|---|---|
| OPTIONS: |
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