FP50R12KT4 Infineon IGBT Module
108,08€
Out of stock
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | 3-Phase |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.25 V |
| Continuous Collector Current at 25 C: | 50 A |
| Gate-Emitter Leakage Current: | 100 nA |
| Pd – Power Dissipation: | 280 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 150 C |
| Height: | 17 mm |
| Length: | 107.5 mm |
| Width: | 45 mm |
| Brand: | Infineon Technologies |
| Mounting Style: | Screw Mount |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
| Part # Aliases: | FP50R12KT4BOSA1 SP000372915 |
| Unit Weight: | 0,180 Kg |
| OPTIONS: |
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