SI4056DY-T1-GE3 Vishay Mosfet
0,98€
MOSFET 100V 23mOhm@10V 11.1A N-Ch MV T-FET
998 in stock
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SO-8 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Id – Continuous Drain Current: | 11.1 A |
| Rds On – Drain-Source Resistance: | 17 mOhms |
| Vgs th – Gate-Source Threshold Voltage: | 1.5 V |
| Vgs – Gate-Source Voltage: | 20 V |
| Qg – Gate Charge: | 29.5 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Configuration: | Single |
| Pd – Power Dissipation: | 5.7 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Series: | SI4 |
| Transistor Type: | 1 N-Channel |
| Brand: | Vishay / Siliconix |
| Forward Transconductance – Min: | 26 S |
| Fall Time: | 10 ns |
| Rise Time: | 14 ns |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Part # Aliases: | SI4056DY-GE3 |
| Unit Weight: | 0,506 kg |
| Weight | 0,506 kg |
|---|---|
| OPTIONS: |
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