Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Dual |
Collector- Emitter Voltage VCEO Max: | 1700 V |
Collector-Emitter Saturation Voltage: | 2.6 V |
Continuous Collector Current at 25 C: | 1300 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd – Power Dissipation: | 6.25 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 125 C |
Height: | 38 mm |
Length: | 140 mm |
Width: | 130 mm |
Brand: | Infineon Technologies |
Maximum Gate Emitter Voltage: | 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
FF800R17KF6C-B2 Infineon IGBT Module_DataSheet.pdf