| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 1700 V |
| Collector-Emitter Saturation Voltage: | 2.3 V |
| Continuous Collector Current at 25 C: | 600 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd – Power Dissipation: | 2500 W |
| Minimum Operating Temperature: | -40 C |
| Maximum Operating Temperature: | +150 C |
| Brand: | Infineon Technologies |
| Mounting Style: | Screw Mount |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Product Type: | IGBT Modules |
| Subcategory: | IGBTs |
| Part # Aliases: | FF450R17ME4BOSA1 SP000408712 |
| Unit Weight: | 0,345 Kg |
IGBT FF450R17ME4
83,00€ (excl. tax)
| OPTIONS: |
|---|
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