Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Dual |
Collector- Emitter Voltage VCEO Max: | 1700 V |
Collector-Emitter Saturation Voltage: | 2.45 V |
Continuous Collector Current at 25 C: | 1390 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd – Power Dissipation: | 6.25 kW |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 38 mm |
Length: | 250 mm |
Width: | 89 mm |
Brand: | Infineon Technologies |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | FF1000R17IE4BOSA1 SP000609592 |
Unit Weight: | 1,263 kg |
FF1000R17IE4 Infineon IGBT Module
381,60€
Out of stock
Weight | 1,263 kg |
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