Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Hex |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.5 V |
Continuous Collector Current at 25 C: | 78 A |
Gate-Emitter Leakage Current: | 200 nA |
Pd – Power Dissipation: | 400 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 17 mm |
Length: | 122 mm |
Width: | 62 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw Mount |
Maximum Gate Emitter Voltage: | 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
BSM50GD120DN2G Infineon IGBT Module
135,22€
Out of stock
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