Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Hex |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.1 V |
Continuous Collector Current at 25 C: | 25 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd – Power Dissipation: | 200 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 125 C |
Height: | 17 mm |
Length: | 107.5 mm |
Width: | 45 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
BSM25GD120DLC Infineon IGBT Module
82,62€
N-CH 1.2KV 25A
Out of stock
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