Manufacturer: | Vishay |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | SO-8 |
Number of Channels: | 1 Channel |
Transistor Polarity: | N-Channel |
Vds – Drain-Source Breakdown Voltage: | 100 V |
Id – Continuous Drain Current: | 11.1 A |
Rds On – Drain-Source Resistance: | 17 mOhms |
Vgs th – Gate-Source Threshold Voltage: | 1.5 V |
Vgs – Gate-Source Voltage: | 20 V |
Qg – Gate Charge: | 29.5 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Configuration: | Single |
Pd – Power Dissipation: | 5.7 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET |
Series: | SI4 |
Transistor Type: | 1 N-Channel |
Brand: | Vishay / Siliconix |
Forward Transconductance – Min: | 26 S |
Fall Time: | 10 ns |
Rise Time: | 14 ns |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 13 ns |
Part # Aliases: | SI4056DY-GE3 |
Unit Weight: | 0,506 kg |
SI4056DY-T1-GE3 Vishay Mosfet
0,98€
MOSFET 100V 23mOhm@10V 11.1A N-Ch MV T-FET
998 in stock
Weight | 0,506 kg |
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OPTIONS: |
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