Manufacturer: | Vishay |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | SOT-23-3 |
Number of Channels: | 1 Channel |
Transistor Polarity: | N-Channel |
Vds – Drain-Source Breakdown Voltage: | 20 V |
Id – Continuous Drain Current: | 3.9 A |
Rds On – Drain-Source Resistance: | 31 mOhms |
Vgs th – Gate-Source Threshold Voltage: | 0.45 V |
Vgs – Gate-Source Voltage: | 4.5 V |
Qg – Gate Charge: | 7.5 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Configuration: | Single |
Pd – Power Dissipation: | 0.75 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET |
Series: | SI2 |
Transistor Type: | 1 N-Channel |
Brand: | Vishay / Siliconix |
Forward Transconductance – Min: | 30 S |
Fall Time: | 10 ns |
Rise Time: | 30 ns |
Typical Turn-Off Delay Time: | 35 ns |
Typical Turn-On Delay Time: | 9 ns |
Part # Aliases: | SI2312BDS-GE3 |
Unit Weight: | 0,008 kg |
SI2312BDS-T1-GE3 Vishay Mosfet
0,49€
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
1000 in stock
Weight | 0,008 kg |
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OPTIONS: |
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