Manufacturer: | Infineon |
Product Category: | IGBT Transistors |
Technology: | Si |
Package/Case: | TO-247-3 |
Mounting Style: | Through Hole |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.43 V |
Maximum Gate Emitter Voltage: | +/- 20 V |
Continuous Collector Current at 25 C: | 41 A |
Pd – Power Dissipation: | 160 W |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Continuous Collector Current Ic Max: | 41 A |
Height: | 20.8 mm (Max) |
Length: | 16.1 mm (Max) |
Width: | 5.5 mm (Max) |
Brand: | Infineon Technologies |
Gate-Emitter Leakage Current: | 100 nA |
Part # Aliases: | SP001533572 |
Unit Weight: | 0,038 kg |
IRG4PH40UD2-EP Infineon Transistors
3,92€
IGBT Transistors 1200V UltraFast 5-40kH
Out of stock
Weight | 0,038 kg |
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