Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.1 V |
Continuous Collector Current at 25 C: | 900 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd – Power Dissipation: | 4300 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Brand: | Infineon Technologies |
Mounting Style: | Screw Mount |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | FZ900R12KE4HOSA1 SP000524466 |
FZ900R12KE4 Infineon IGBT Module
175,99€
Out of stock
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