MODULE IGBT FS150R12KE3BOSA1 200A 1200V NEW

135,00€ (excl. tax)

SKU: FS150R12KE3BOSA1 Category: Electronics Components Tag: Infineon

Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	Hex
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	1.7 V
Continuous Collector Current at 25 C:	205 A
Gate-Emitter Leakage Current:	400 nA
Pd – Power Dissipation:	700 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 125 C
Height:	12 mm
Length:	35.6 mm
Width:	25.4 mm
Brand:	Infineon Technologies
Maximum Gate Emitter Voltage:	+/- 20 V
Product Type:	IGBT Modules
Subcategory:	IGBTs
Part # Aliases:	FS150R12KE3BOSA1 SP000100417

OPTIONS:	NEW