Manufacturer: | ON Semiconductor |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | Through Hole |
Package/Case: | TO-3PN-3 |
Number of Channels: | 1 Channel |
Transistor Polarity: | N-Channel |
Vds – Drain-Source Breakdown Voltage: | 900 V |
Id – Continuous Drain Current: | 11 A |
Rds On – Drain-Source Resistance: | 1.4 Ohms |
Vgs – Gate-Source Voltage: | 30 V |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Configuration: | Single |
Pd – Power Dissipation: | 300 W |
Channel Mode: | Enhancement |
Tradename: | QFET |
Height: | 20.1 mm |
Length: | 16.2 mm |
Series: | FQA11N90C_F109 |
Transistor Type: | 1 N-Channel |
Width: | 5 mm |
Brand: | ON Semiconductor / Fairchild |
Fall Time: | 85 ns |
Rise Time: | 130 ns |
Typical Turn-Off Delay Time: | 130 ns |
Typical Turn-On Delay Time: | 60 ns |
Part # Aliases: | FQA11N90C_F109 |
Unit Weight: | 0,006401 kg |
FQA11N90C-F109 On Semicondutor Mosfet
2,55€
MOSFET 900V N-Ch Q-FET advance C-Series
1000 in stock
Weight | 0,006401 kg |
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