Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | 3-Phase |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.25 V |
Continuous Collector Current at 25 C: | 50 A |
Gate-Emitter Leakage Current: | 100 nA |
Pd – Power Dissipation: | 280 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 17 mm |
Length: | 107.5 mm |
Width: | 45 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw Mount |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | FP50R12KT4BOSA1 SP000372915 |
Unit Weight: | 0,180 Kg |
FP50R12KT4 Infineon IGBT Module
108,08€
Out of stock
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