FP50R06W2E3 Infineon IGBT Module

Name: FP50R06W2E3 Infineon IGBT Module
SKU: FP50R06W2E3
Availability: OutOfStock

52,52€ (excl. tax)

600V 50A

Out of stock

SKU: FP50R06W2E3 Category: Electronics Components Tag: Infineon

Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	IGBT-Inverter
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.45 V
Continuous Collector Current at 25 C:	65 A
Gate-Emitter Leakage Current:	400 nA
Pd – Power Dissipation:	175 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	Infineon Technologies
Mounting Style:	SMD/SMT
CNHTS:	8541290000
HTS Code:	8541290095
Maximum Gate Emitter Voltage:	+/- 20 V
MXHTS:	85412999
Product Type:	IGBT Modules
Subcategory:	IGBTs
TARIC:	8541290000
Part # Aliases:	FP50R06W2E3BOMA1 SP000375909
Unit Weight:	0,039kg

Weight	0,039 kg
OPTIONS:	NEW