Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Dual |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.15 V |
Continuous Collector Current at 25 C: | 580 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd – Power Dissipation: | 2 kW |
Package/Case: | 62 mm |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 125 C |
Height: | 30.9 mm |
Length: | 106.4 mm |
Width: | 61.4 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw |
Maximum Gate Emitter Voltage: | 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | FF400R12KE3HOSA1 SP000100781 |
Unit Weight: | 0,340 kg |
TZ425N12KOF Infineon Thyristor_DataSheet FF400R12KE3 Infineon IGBT Modules_DataSheet.pdf