Manufacturer: | Infineon |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | PG-SOT-23-3 |
Number of Channels: | 1 Channel |
Transistor Polarity: | N-Channel |
Vds – Drain-Source Breakdown Voltage: | 100 V |
Id – Continuous Drain Current: | 90 mA |
Rds On – Drain-Source Resistance: | 6 Ohms |
Vgs th – Gate-Source Threshold Voltage: | – 2.9 V |
Vgs – Gate-Source Voltage: | 10 V |
Qg – Gate Charge: | 2.1 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Configuration: | Single |
Pd – Power Dissipation: | 360 mW |
Channel Mode: | Depletion |
Product: | MOSFET Small Signal |
Series: | BSS169 |
Transistor Type: | 1 N-Channel |
Type: | SIPMOS Small Signal Transistor |
Brand: | Infineon Technologies |
Forward Transconductance – Min: | 0.1 S |
Fall Time: | 27 ns |
Rise Time: | 2.7 ns |
Typical Turn-Off Delay Time: | 11 ns |
Typical Turn-On Delay Time: | 2.9 ns |
Part # Aliases: | BSS169H6327XT
BSS169H6327XTSA1 SP000702572 |
Unit Weight: | 0,000008 kg |
BSS169 Infineon Mosfet
0,13€
MOSFET N-Ch 100V 90mA SOT-23-3
Out of stock
Weight | 0,000008 kg |
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