Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.5 V |
Continuous Collector Current at 25 C: | 430 A |
Gate-Emitter Leakage Current: | 320 nA |
Pd – Power Dissipation: | 2500 W |
Package/Case: | 62 mm |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 36.5 mm |
Length: | 106.4 mm |
Width: | 61.4 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | BSM300GA120DN2HOSA1 SP000100730 |
BSM300GA120DN2 Infineon Transistors
175,22€
IGBT Modules 1200V 300A SINGLE
Out of stock
Weight | 0,33 kg |
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OPTIONS: |
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