Manufacturer: | Infineon |
Product Category: | IGBT Transistors |
Technology: | Si |
Mounting Style: | Screw |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.5 V |
Maximum Gate Emitter Voltage: | +/- 20 V |
Continuous Collector Current at 25 C: | 200 A |
Pd – Power Dissipation: | 1550 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 36.5 mm |
Length: | 106.4 mm |
Width: | 61.4 mm |
Brand: | Infineon Technologies |
Continuous Collector Current: | 300 A |
Gate-Emitter Leakage Current: | 200 nA |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
BSM200GA120D Infineon IGBT Module
91,23€
Out of stock
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