Manufacturer: | Infineon |
Product: | IGBT Silicon Modules |
Configuration: | Hex |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 2.2 V |
Continuous Collector Current at 25 C: | 95 A |
Gate-Emitter Leakage Current: | 400 nA |
Power Dissipation: | 330 W |
Maximum Operating Temperature: | + 125 C |
Maximum Gate Emitter Voltage: | +/- 20 V |
Minimum Operating Temperature: | – 40 C |
BSM150GT120DLC Infineon IGBT Module
346,09€
Out of stock
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