Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Dual |
Collector- Emitter Voltage VCEO Max: | 1700 V |
Collector-Emitter Saturation Voltage: | 3.4 V |
Continuous Collector Current at 25 C: | 220 A |
Gate-Emitter Leakage Current: | 100 nA |
Pd – Power Dissipation: | 1.25 kW |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 30 mm |
Length: | 106.4 mm |
Width: | 61.4 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw Mount |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
BSM150GB170DN2 Infineon IGBT Module
854,59€
Out of stock
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