Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | Hex |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.7 V |
Continuous Collector Current at 25 C: | 15 A |
Gate-Emitter Leakage Current: | 120 nA |
Pd – Power Dissipation: | 80 W |
Minimum Operating Temperature: | – 40 C |
Maximum Operating Temperature: | + 150 C |
Height: | 17 mm |
Length: | 107.5 mm |
Width: | 45.5 mm |
Brand: | Infineon Technologies |
Mounting Style: | Screw |
Maximum Gate Emitter Voltage: | +/- 20 V |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Part # Aliases: | BSM10GD120DN2BOSA1 SP000100367 |
Unit Weight: | 0,180 kg |
BSM10GD120DN2 Infineon IGBT Module
49,68€
1200V 10A FL BRIDGE
Out of stock
Weight | 0,180 kg |
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OPTIONS: |
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