SI2305CDS-T1-GE3 Vishay Mosfet

MOSFET 100V 23mOhm@10V 11.1A N-Ch MV T-FET

Manufacturer:	Vishay
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Number of Channels:	1 Channel
Transistor Polarity:	N-Channel
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	11.1 A
Rds On – Drain-Source Resistance:	17 mOhms
Vgs th – Gate-Source Threshold Voltage:	1.5 V
Vgs – Gate-Source Voltage:	20 V
Qg – Gate Charge:	29.5 nC
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 150 C
Configuration:	Single
Pd – Power Dissipation:	5.7 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI4
Transistor Type:	1 N-Channel
Brand:	Vishay / Siliconix
Forward Transconductance – Min:	26 S
Fall Time:	10 ns
Rise Time:	14 ns
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	SI4056DY-GE3
Unit Weight:	0,506 kg

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