IXFN200N10P Ixys IGBT Module

Name: IXFN200N10P Ixys IGBT Module
SKU: IXFN200N10P
Availability: InStock

25,40€ (excl. tax)

100V 200A

10 in stock

SKU: IXFN200N10P Category: Electronics Components Tag: Ixys

Manufacturer:	IXYS
Product Category:	MOSFET
Technology:	Si
Mounting Style:	Chassis Mount
Number of Channels:	1 Channel
Transistor Polarity:	N-Channel
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	200 A
Rds On – Drain-Source Resistance:	7.5 mOhms
Vgs – Gate-Source Voltage:	20 V
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 175 C
Configuration:	Single Dual Source
Pd – Power Dissipation:	680 W
Channel Mode:	Enhancement
Tradename:	HyperFET
Height:	9.6 mm
Length:	38.23 mm
Series:	IXFN200N10
Transistor Type:	1 N-Channel
Width:	25.42 mm
Brand:	IXYS
Fall Time:	90 ns
Product Type:	MOSFET
Rise Time:	35 ns
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	30 ns
Unit Weight:	0,03 kg

Weight	0,03 kg
OPTIONS:	NEW