BSM25GB120DN2 Infineon IGBT Module

Name: BSM25GB120DN2 Infineon IGBT Module
SKU: BSM25GB120DN2
Price: 34.68 EUR
Availability: OutOfStock

34,68€

1200V 25A

Out of stock

SKU: BSM25GB120DN2 Category: Electronics Components Tag: Infineon

Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	Half Bridge
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	2.5 V
Continuous Collector Current at 25 C:	38 A
Gate-Emitter Leakage Current:	180 nA
Pd – Power Dissipation:	200 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 150 C
Height:	30.5 mm
Length:	94 mm
Width:	34 mm
Brand:	Infineon Technologies
Mounting Style:	Chassis Mount
Maximum Gate Emitter Voltage:	20 V
Product Type:	IGBT Modules
Subcategory:	IGBTs

OPTIONS:	NEW